| PART |
Description |
Maker |
| FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| FQA32N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA6N90C |
900V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor
|
| FQI13N50CTU |
500V N-Channel Advance Q-FET C-Series; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 13 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQA8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI6N60C FQB6N60C FQB6N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA10N60C |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
